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DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped field-effect transistors (FinFETs) is presented. Among other features, the model incorporates self-heating effects (SHEs), velocity saturation and short-channel effects. SHEs are analysed in depth by means of thermal resistances, which are determined through an equivalent thermal circuit, accounting for the...
Improved transport models for quasi-3D circuit-based simulation (Q3DSim) of four-layer devices such as thyristors and transient over-voltage protectors (TOVPs) are presented. Q3DSim is an attractive alternative to full 3D transport equations based simulations (3D-TES), since it is much faster and requires less computer power. In Q3DSim, the thyristor is divided into four-layered square prisms, and...
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