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Mn + -implanted and annealed Si 1−x Ge x thin films grown on p-Si (100) substrates were formed with the goal of producing (Si 1−x Ge x ) 1−y Mn y with a high ferromagnetic transition temperature (Tc). The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si 1−x Ge...
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