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Gallium Nitride Surface
The vulnerability of the GaN surface is a critical restriction that hinders the development of GaN‐based devices. In article number 2208960, Junting Chen, Junlei Zhao, Mengyuan Hua, and co‐workers report the conversion of the GaN surface into a gallium oxynitride (GaON) epitaxial nanolayer by an in situ two‐step “oxidation–reconfiguration” process. The metastable GaON nanolayer...
Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is a critical restriction that hinders the development of GaN‐based devices, especially in terms of device stability and reliability. In this study, this challenge is overcome by converting the GaN surface into a gallium oxynitride...
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