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In this paper, strain effects on silicon n-channel gate-all-around (GAA) jucntionless field effect transistor (JLFET) are studied. By using tensile strain SiN layer, drive currents of the JLFETs show enhancement of up to 42%. The high performance strained JLFETs exhibit superior gate control (Ion/Ioff >109) and ideal S.S. (65 mV/dec.) as a channel width scales down to 20 nm. Drive currents and...
Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO2/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0...
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