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In comparison to standard CMOS devices for logic applications, periphery devices for DRAMs typically require a long anneal in the temperature range between 600 and 800°C after the silicide formation. This gives additional constraints in many process steps, in particular in the silicidation step. In this work the feasibility and optimization of a thermally stable NiPt silicide has been investigated...
In this paper, we propose a method to extract effective diffusion coefficients for Lanthanum in HfO2 for an HKMG technology. TCAD diffusion simulations is combined to the analysis of theoretically expected Work Function shift due to Lanthanum at the HfO2/SiO2 interface and experimentally extracted Work Function value under various thermal budgets, obtaining a good agreement between simulations and...
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