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We present a comprehensive study of Si0.55Ge0.45-cladded p-channel FinFETs, including a comparison with planar SiGe quantum-well devices. The SiGe-cladded FinFETs exhibit ∼2× higher hole mobility, ∼2× better ION/IOFF, and improved DIBL compared to Si control devices. Superior NBTI reliability over equivalent Si FinFETs is demonstrated for cladding thicknesses down to 3 nm. The dependencies of drive...
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