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The phase mode atomic force microscopy (AFM) lithography and monolayer lift‐off process are combined to fabricate electronics based on 2D materials (2DMs), which remove the need for pre‐fabricating markers and increase the accuracy of the overlay and alignment. The promising phase mode of AFM lithography eliminates the drawbacks of the conventional force mode such as the over‐cut, under‐cut, debris...
In article number 1803273, Lianqing Liu and co‐workers propose a unique mask‐free and marker‐free lithography technique to fabricate a sub‐micrometer‐sized 2D material thin‐film transistor using the phase mode of atomic force microscopy. This method does not change the chemical, physical, and electrical properties of 2D materials. It offers a flexible, easy, effective, and low‐cost way to fabricate...
Lattice orientation detection techniques are crucial for two-dimensional materials as many unusual properties, such as electronic, optical, catalytic and magnetic properties, are closely related to particular lattice orientations. Herein, we propose a novel, low-cost and convenient detection technique, referred to as a single-line-scan power spectrum analysis (SPSA), which is established based on...
An theoretical and experimental study on friction anisotropy and 120 degree periodicity variation in atomic friction of MoS2 is presented in this paper. To clearly clarify these properties, fast Fourier transform(FFT) is utilized by Matlab software to perform the frequency variation of the actual friction signal wave acquired from the lateral friction experiment. Characteristic of the computed frequency...
Organic–inorganic heterostructures are an emerging topic that is very interesting for optoelectronics. Here, non‐conventional p–n junctions are investigated using organic rubrene single crystal and 2D MoS2 as the p‐ and n‐type semiconducting materials, respectively. The current‐rectifying behavior is clearly observed in the junction device. The rectification ratio can be electrically tuned by the...
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