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We have studied the fabrication of ring oscillator and shift resistor using p-type metal–oxide–semiconductor (pMOS) TFTs based on silicon-on-glass (SiOG). The TFT exhibited field-effect mobility of 183cm 2 /Vs, threshold voltage of −0.30V and gate voltage swing of 0.14V/dec. The 23-stage ring oscillator made of pMOS TFTs exhibited a propagation delay time of 2.61ns at the supply voltage of...
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