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We report a self-aligned coplanar amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) using an stack layer. From the channel-length dependence of the total resistance for the TFTs, the channel and parasitic resistances were found to be 8.4 and 9.7 , respectively. The fabricated a-IGZO TFT exhibits field-effect...
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