The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In article number 2003225, Soo Young Kim, Ho Won Jang, and co‐workers successfully fabricate preconditioned resistive switching memory devices using lead‐free dual‐phase halide perovskites. The devices show filamentary resistive switching behavior involving Ag cations in halide perovskites with ultra‐low operating voltages, and high on/off ratio.
Organometallic and all‐inorganic halide perovskites (HPs) have recently emerged as promising candidate materials for resistive switching (RS) nonvolatile memory due to their current–voltage hysteresis caused by fast ion migration. Lead‐free and all‐inorganic HPs have been researched for non‐toxic and environmentally friendly RS memory devices. However, only HP‐based devices with electrochemically...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.