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This paper proposes high resolution digital beamforming technique using software defined radio (SDR). Digital phase shifter was designed with digital mixer and digital source and digital phase calibration technique was designed using digital processing block with correlation coefficient.
An experimental validation for millimeter-wave (mm-wave) channel measurement is presented in a reverberation chamber (RC) at 28 GHz band. A 28 GHz channel sounder and a vector network analyzer were used to measure complex channel transfer functions at the specific position of the rotating mode-stirrer in the RC. To demonstrate the experimental validation according to different antenna directions and...
In order to interpret observations of luminous infrared/sub-mm galaxies and AGNs at high redshifts, and to study their evolution from the earliest epochs of star formation to the present, it is important to construct a comprehensive understanding of the properties of objects that are thought to be the closest analogs in the local Universe. These are the luminous infrared galaxies (LIRGs,...
For the first time, we have successfully integrated HfSiON gate dielectric to DRAM and obtained excellent data retention time. Lower gate leakage current and better mobility of HfSiON than plasma nitrided oxide resulted in a 22% smaller propagation delay measured at CMOS inverter as well as one order of magnitude lower stand-by current for DRAM. Optimized gate poly-Si reoxidation and high Vt of HfSiON...
For the first time, titanium-nitride (TiN) single metal gate and high-k hafnium-silicate (HfSiOx) gate dielectric have been successfully integrated in 55nm McFET SRAM cell. The use of HfSiOx gate dielectric, not only reduces gate leakage current but also improves ION/IOFF ratio of PFET to 108. Using local fin implantation (LFI) scheme, junction capacitance is reduced by 13% and junction breakdown...
Plasma assisted chemical vapor deposition(PACVD) of aluminum has been studied for the planarized metallization of ULSI. According to PACVD, plugging of the submicron contact holes followed by planarized interconnection was possible by the blanket deposition. As the RF plasma power increased, the step coverage became less conformal. PACVD aluminum obtained at low RF plasma power showed much smoother...
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