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For the first time, the relationship between high frequency and dielectric relaxation of dipoles formed at the high-k/SiO2 interface was systematically investigated in La-doped HfSiON devices. Due to the dipole-induced dielectric relaxation, it was found that high frequency performance, especially voltage gain degrades severely caused by a substantial loss in gate capacitance, transconductance, and...
In this paper, a novel method for effective mobility extraction of the advanced MOSFET devices using RF modeling scheme is proposed. The proposed method is robust to high gate leakage current and parasitic source/drain resistance. Also, this method can substantially reduce error from drain bias mismatch between channel conductance and gate-to-channel capacitance measurement, uses only single device,...
La-doped HfSiO samples show lower threshold voltage (Vth) and gate current (Igate), which is attributed to dipole formation at the high-k/SiO2 interface. At low and intermediate field stress, La-doped devices exhibit better immunity to positive bias temperature instability (PBTI) due to their lower charge trapping efficiency than the control HfSiO, which mainly results from a dipole-induced greater...
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