The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, a novel method for effective mobility extraction of the advanced MOSFET devices using RF modeling scheme is proposed. The proposed method is robust to high gate leakage current and parasitic source/drain resistance. Also, this method can substantially reduce error from drain bias mismatch between channel conductance and gate-to-channel capacitance measurement, uses only single device,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.