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The microstructure, electrical and optical properties of Hf 1−x Ta x O (x = 0, 0.18, 0.28, 0.36 and 0.43) high-k thin films deposited by a novel deposition technique—dual ion beam sputtering deposition (DIBSD) have been investigated. From the O1s and Si 2p spectra of X-ray photoelectron spectroscopy (XPS), it is worth noting that the thickness of the interfacial layer significantly...
Hafnium-Zirconium-Oxide-Nitride (Hf 1−x Zr x O 1−y N y ) films are prepared by ion beam assisted deposition on p–Si and quartz substrates with a composite target of sintered high-purity HfO 2 and ZrO 2 . The thermal stability and microstructure characteristics for Hf 1−x Zr x O 1−y N y films have been investigated. EDS...
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