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Gallium oxide thin films were grown on c-plane sapphire substrate by molecular beam epitaxy. The homo-self-templated buffer layer was introduced for the gallium oxide thin film growth, and accordingly the FWHM of the on-axis (2¯01) β-Ga2O3 diffraction peak of the X-ray diffraction rocking curve was reduced from 1.9° to 0.9°, proving an improvement in the crystalline quality of β-Ga2O3 thin film. In...
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