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Resistive switching memory with low switching current is critical for low power application. In this work, we successfully demonstrated a four-terminal RRAM device with ultra-low switching current. The device is SET by one pair of electrodes and RESET by the other. Therefore, during RESET process, no current flows through the filaments, leading to an ultra-low switching current.
Scaling is a key issue for resistive switching (RS) memory before commercialization. In this letter, we reveal the impact of electrode diffusion on the device performance as the thickness of RS material scaled. Serious deterioration of on/off ratio and device yield was observed when the material thickness scaled below 3 nm. A new method of two-step electrode deposition accompanied with reoxidization...
SRM is suitable to be used as drivers of electric bicycle (E-bike). A nonlinear dynamics model based on Matlab/Simulink of E-bike and four regenerative braking strategies of SRM are presented in this paper, such as most feedback power control strategy, most feedback efficiency control, fixed torque control, fixed feedback current control. A hybrid control strategy of PWM mode and current chopping...
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