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In this work a novel device structure of a photoconductive sensor manufactured in In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As heterostructures with a 100nm wide T shape gate patterned on the top of a two dimensional electron gas (2DEG) was proposed. The nanosize gate defines the ultra short conducting channel underneath it, leading to the ballistic transport of the photoconductive...
There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From the point view of materials, the transfer efficiency of the electrons from the δ-doped AlGaAs layer to the InGaAs channel must be high. From the point view of device processing, the gate recess depth must be carefully controlled. In the present work, AlGaAs/InGaAs/GaAs pHEMTs structures were grown by...
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