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Mixed phase a-C/diamond films were deposited on glass and fused silica substrates by dc magnetron sputtering of a vitreous carbon target in argon plasma. The optical characterization of the films, deposited at zero bias voltage, (V B = 0) indicated a high band gap (E g < 3 eV). E g increased further when deposited with negative bias voltage (V B = -100 V). The variations...
CuIn 1-x Ga x Se 2 (0 ≤ x ≤ 0.25) films were deposited (on glass substrates at ∼ 770 K) by four source coevaporation technique. The thickness and average grain size of the films varied within 3-3.5 μm and 0.2-0.5 μm, respectively, with small variation of surface roughness (18-24 nm). The films were characterized by measuring the microstructural, optical and mechanical...
Amorphous hydrogenated carbon (a-C:H) films were deposited (at room temperature) by plasma CVD of acetylene onto glass substrates with substrate bias (V B ) varying within 0 to -400 V. Films deposited at V B ≥ 200 V showed significant photoconductivity. The photoconductivity of the films was measured under different illumination level (0-100 mW/cm 2 ). Hopping at the shallow...
A comprehensive description of the broadening of the absorption tail in polycrystalline semiconductor films has been presented by considering intrinsic inhomogeneity due to random distribution of grains and grain boundary regions and the fluctuation in potential from local thermal vibrations present at the grains and grain-grain interfaces. The model has been applied to describe the absorption data...
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