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Thin film 4H‐silicon carbide (4H‐SiC) is emerging as a contender for realizing large‐scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing wafer‐scale 4H‐SiC thin film on insulator (4H‐SiCOI) for dense integration of photonic circuits, and in efficient coupling of deterministic quantum emitters that are...