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AlGaN‐based spacer layers for lattice‐matched and nearly lattice matched InAlN/GaN interfaces were examined in Al2O3/InAlN/AlGaN/AlN/GaN structures. An Al2O3 overlayer was deposited to investigate the characteristics under positive bias by capacitance‐voltage (C‐V) measurement. The C‐V characteristic for a sample with an Al0.38Ga0.62N/AlN double spacer layer indicated unfavorable electron accumulation...
The polarization‐induced electric field in ultrathin InxAl1‐xN (0.17 ≤ x ≤ 0.30) layers on GaN was investigated by using X‐ray photoelectron spectroscopy (XPS). The core‐level energy position, ECL, and the full width at half maximum (FWHM) of the Al2p, In4d, and In3d spectra from 2.5‐nm‐thick InAlN layers increased with the increase in the photoelectron exit angle (elevation angle). These increases...
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