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High-quality ultrathin film is the key element of hot-electron devices. Using a doped sputtering target, high-performance niobium (Nb) ultrathin films are grown on high-resistivity silicon (Si), magnesium oxide (MgO), and sapphire substrates, optimized by grown 1-nm-thick aluminum nitride (AlN) films on the top. Superconducting transition temperature of about 7.5 K and critical current...
Three-dimensional (3D) chip integration with through-silicon-vias (TSV's) can enable system benefits of enhanced performance, power efficiency, and cost reduction leveraging micro-architecture designs such as 2.5D silicon packages and 3D die stacks. 2.5D silicon packages and 3D die stacks structures integrated in modules each have unique technical challenges but each can provide system benefits including...
Through-silicon-via (TSV) technology has been demonstrated to be capable of being applied into many microelectronics products, e.g., CMOS image sensor (CIS), DRAM, flash memory, 3D-MEMS, RF-SiP, logic-SiP, LED, etc. However, new IC design is needed to implement the TSV interconnect into a chip and the specific TSV line is required for TSV fabrication, the facts of long time needed for new IC design...
The present paper is devoted to the description of a fabrication process of thick (tens of micrometers) insulating SiO2 membrane embedded in a c-Si substrate. The membrane processing consists of total thermal oxidation of trenches, which were preliminary etched on front side of the substrate, conformal deposition of dielectric layer for SiO2 trenches closing and selective etching of c-Si from back...
This paper details the first reported integration of two advanced digital microfluidic technologies where 100 mum silicon cubes are transported with electrowetting on dielectric (EWOD) and the droplet then held with EWOD while the silicon cubes are mixed with another liquid using a surface acoustic wave (SAW). Together these two technologies provide a comprehensive lab-on-a-chip combination with well...
0.95(K0.48Na0.52NbO3)-0.05(LiSbO3) (95KNN-5LS) thin films have been fabricated by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si substrates. The K-rich in the target and the fabrication parameters on the properties of the films was investigated. The results show that good films can be obtained with the 0.95(K0.48Na0.52NbO3)-0.05(LiSbO3)-0.0228K2CO3 (95KNN-5LS-4.56K) target, and the surface roughness,...
Electroluminescence devices based on nanocrystalline Si/SiO2 multilayers were fabricated and the luminescence can be observed both from vertical and lateral direction. Moreover, P-doped nanocrystalline Si/SiO2 multilayers were prepared and the improved electro-luminescence characteristics were achieved.
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