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For focused ion beam technology in the next generation, an adequate emitter shape for field gas ion source was investigated to obtain a higher angular current density, dI/dΩ. A < 111 > ‐oriented tungsten emitter with a trimer‐terminated nanostructure was fabricated by field‐assisted oxygen etching method. Since this method does not utilize thermodynamic phenomena, e.g. faceting of crystal plane...
In this study, a spin-polarized electron source which can operate at room temperature is reported. <110>-oriented single crystal magnetite whiskers 30 to 200 nm in diameter were synthesized on a stainless steel plate by the combustion flame thermal oxidation process. Microscopic analyses revealed that the whiskers have some defects such as stacking faults and dislocations and also that manganese...
Now a day, focused ion beam (FIB) systems equipped with a gallium liquid metal ion source (Ga-LMIS) have been used in the wide areas, e.g., photo-mask repair for semiconductor devices, micro-fabrication for MEMS, sample preparation for TEM and so on. However, contaminations by the irradiated gallium ions are severe problems in these applications, thus for an FIB system in the next generation, a development...
In this paper, novel and simple fabrication method of CNT field emitter by means of direct growth of CNT onto tungsten tip by CVD was developed. This method enables a fabrication of a high-quality CNT field emitter with simpler procedures than conventional methods. Aluminum (Al), nickel (Ni) and molybdenum (Mo) films were sequentially deposited onto a W tip with tip radius of ~ 0.1 micrometer. Ni...
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