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In order to improve the brightness of gas field ion source (GFIS), numerical simulations of field distribution around the tip apex and the shank were performed taking into account an increase of gas capture area for field ionization. This experiment results of ion current at gas temperature 300K and the calculation results at same condition are compared to confirm the reliability of the calculations...
Now a day, focused ion beam (FIB) systems equipped with a gallium liquid metal ion source (Ga-LMIS) have been used in the wide areas, e.g., photo-mask repair for semiconductor devices, micro-fabrication for MEMS, sample preparation for TEM and so on. However, contaminations by the irradiated gallium ions are severe problems in these applications, thus for an FIB system in the next generation, a development...
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