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We have studied the electronic characteristics of the C defects of Si(001) by scanning tunneling microscopy (STM) and spectroscopy at 80K and room temperature. At room temperature, the C defects had a metallic feature as reported before. However, at 80K, the C defects that do not act as phase shifters were found to have a metallic feature similar to those at room temperature, while the C defects that...
Dynamic characteristics of the C defect were studied by consecutive scanning tunneling microscopy observations. Not only the transformation of the C defect into a C2 defect but also the reverse transition, a C2 to C structural change, and a more complicated C to C2-C2 transformation were observed. All of the experimental results suggest that the C2 defect is a metastable and excited state of the C...
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