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GaN ultraviolet p-i-n avalanche photodiodes grown on 6H-SiC substrates by metalorganic chemical vapour deposition are reported. Silicon nitride (SixN1-x) is employed as the dielectric passivation layer for the diode, rather than the conventional SiO2. For the SiN passivated device, the photoresponse is relatively independent of the bias voltage for VRB < 50 V. With ultraviolet illumination, devices...
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