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Direct metallization of lightly doped n‐type crystalline silicon (c‐Si) is known to routinely produce non‐Ohmic (rectifying) contact behaviour. This has inhibited the development of n‐type c‐Si solar cells with partial rear contacts, an increasingly popular cell design for high performance p‐type c‐Si solar cells. In this contribution we demonstrate that low resistance Ohmic contact to n‐type c‐Si...
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