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One S-band high-power GaN-based power amplifier (PA) is investigated. The design of the multi-stage PA and the biasing circuit are investigated seperately, including the two stages of power amplifiers which delivers about 50dBm of saturated output power in class AB from 2.7 to 2.9 GHz and the bias control channel which provides special bias and power sequencing for GaN HEMTs. Overall circuits operating...
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