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A new design of a non-volatile magnetic flip-flop is presented. The use of a magnetic tunnel junction (MTJ) to store the information brings non-volatility to logic circuits and promises zero standby power. It is based on the thermally assisted switching (TAS) approach and the pre-charge sense amplifier. By using STMicroelectronics' CMOS 0.13um design kit and a precise TAS-MTJ compact model, transient...
The development of hybrid magnetic-CMOS circuits such as MRAM (magnetic RAM) and magnetic logic circuit requires efficient simulation models for the magnetic devices. A macro-model of magnetic tunnel junction (MTJ) is presented in this paper. This device is the most commonly used magnetic components in CMOS circuits. This model is based on spin-transfer torque (STT) writing approach. This very promising...
In this paper, we propose a new structure of FPGA based on MRAM technology; we name it MFPGA (magnetic FPGA). FPGA based on SRAM technology has been developed in the last years, because of its high speed and near limitless number of reprogramming, however SRAM is volatile thereby the configuration information and the intermediate data will be lost when power is turned off. By using MTJs (magnetic...
In this paper, the paper propose a new non-volatile FPGA circuit based on spin-RAM technology (spin transfer torque magnetisation switching RAM), new generation of MRAM (magnetic RAM). This spin-RAM based FPGA circuit could process securely the information in low power dissipation and high speed; meanwhile all the data processed are stored permanently in the distributed spin-RAM memory. In this non-volatile...
In this paper, the authors propose a non-volatile flip-flop, which presents simultaneously low power dissipation and high speed. This flip-flop is based on MRAM (magnetic RAM) technology on standard CMOS. In this non-volatile flip-flop design, the authors use magnetic tunnel junctions (MTJ) as storage element. Contrary to the complex sense amplifier circuit in standard MRAM circuits, a simple one...
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