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Thin Gd2O3 films with a thickness of about 150nm were deposited by pulsed layer deposition on polycrystalline CeO2 substrates to study the structural evolution of the Ce1−xGdxO2−x/2 system with respect to phase formation and cation interdiffusion in the temperature range between 986°C and 1270°C. Transmission electron microscopy combined with quantitative energy dispersive X-ray spectroscopy was applied...
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