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Using nanofabrication techniques we made Si point contacts with constriction sizes down to 85 nm and investigated their I-V curves at temperatures between 300 K and 200 mK. At room temperature the devices are ohmic and obey the Maxwell resistance. Below 40 K the type of conduction at low electric fields is Mott-variable range hopping. At higher fields an intriguing non-ohmic behaviour was found...
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