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This paper reports In0.53Ga0.47As quantum-well MOSFET with source/drain regrowth for logic applications. For a device with Lg=100nm and EOT of 1.1nm, Ion=550µA/µm at 0.5V and fixed Ioff=100nA/µm, peak gm,ext=2.21mS/µm, and SS=82mV/dec at Vds=0.5V are obtained. Minimum SS at Vds=0.5V remains 80–87mV/dec for all gate lengths from 500nm to 75nm. To our knowledge, these are the best planar InGaAs-channel...
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