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Sub-40nm body-tied FinFET BE-SONOS NAND Flash is studied extensively. BE-SONOS offers efficient hole tunneling erase and excellent data retention. When integrated into a FinFET structure, the inherent field enhancement (FE) effect around the fin tip provides very faster program/erase speed. However, the non-uniform injection around the fin also greatly complicates the operation of FinFET BE-SONOS...
A high-performance body tied FinFET BE-SONOS device is demonstrated, suitable for NAND Flash memory scaling beyond 30 nm technology node. BE-SONOS offers efficient hole tunneling erase and excellent data retention. When integrated into a FinFET structure, a much higher program/erase speed is obtained, owing to the inherent field enhancement (FE) effect around the fin tip. In this work, a very scaled...
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