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Recent embedded ReRAM has a small resistance-ratio (R-ratio), which results in a small read sensing margin (ISM). A larger BL current (IBL) increases the input offset (IOS) of current-mode sense amplifiers (CSA), resulting in low-yield read operations and long read access times (TCD). This work proposes an IBL-aware small-IOS CSA, using a dynamic trip-point-mismatch sampling (DTPMS) scheme to increase...
Ternary content-addressable memory (TCAM) is used in search engines for network and big-data processing [1]–[6]. Nonvolatile TCAM (nvTCAM) was developed to reduce cell area (A), search energy (ES), and standby power beyond what can be achieved using SRAM-based TCAM (sTCAM) [1]–[2]: particularly in applications with long idle times and frequent-search-few-write operations. nvTCAMs were previously designed...
NBTI-induced PMOS transistor aging has become a prominent reliability concern in the nano-scaled IC design. In this paper, the impact of NBTI on the main performances of P-type domino AND gates which are used widely for designing high performance digital integrated circuits, is analyzed by HSPICE simulation. Experimental results show that under 110 degree centigrade, the time delay of the 32nm technology...
Alpha-fetoprotein (AFP) is a typical tumor marker in early diagnosis. Highly specific detection of the AFP was demonstrated using AlGaAs/GaAs high electron mobility transistors (HEMTs). Anti-AFP antibody was immobilized to the Au-coated gate area of the HEMT by a covalent modification method. To avoid any nonspecific binding, the gate was blocked by bovine serum albumin after the reduction of the...
A static-induction transistor (SIT) with surface-gate structure design method through solving epi-layer parameter and source breakdown voltage (BVGSO) as sally port is described. A high performance SIT is manufactured and tested in this paper. Based on the previous experiences and theory, a proper epi-layer is chosen. Then targeting to the design goal, other structure parameters are deduced by ways...
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