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The advantages of GaN based light-emitting diodes (LEDs) with strain-compensated p-AlGaN/InGaN superlattice (SL) last quantum barrier (LQB) are investigated numerically. The simulation results indicate that the output power and internal quantum efficiency have been improved significantly by replacing the last barrier of the conventional u-GaN and p-GaN with p-AlGaN/InGaN SL. These improvements are...
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