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A comparison of the radiation tolerances of MOCVD-grown GaAs/GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The electron radiation was delivered in doses of 1*10/sup 16/ cm/sup -2/ up to a total dose of 1*10/sup 17/ cm/sup -2/ for GaAs/GaAs and a total dose of 7*10/sup 16/ cm/sup -2/ for GaAs/Ge. Following each dose, the cells were annealed at either 250 degrees C or 300 degrees...
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