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Reports S-parameter measurements of AlInAs/GaInAs/InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80 K is 3 dB higher than at 300 K, and the current gain cutoff frequency f/sub T/ increases from 32 GHz at 300 K, to 42 GHz at 80 K, which is the first observation of higher f/sub T/ by direct measurement.<<ETX>>
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