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The effects of self-aligned fluorine-ion implantation on the negative-bias temperature instability (NBTI) of p-channel metal–oxide–semiconductor field-effect transistors with HfMoN metal gates and gate dielectrics were investigated. The threshold voltage can be adjusted from 0.8 to 0.02 V by increasing the nitrogen concentration in the HfMoN metal gates. However,...
Improvement of Fermi-level pinning (FLP) and relaxation of negative-bias-temperature-instability (NBTI) for CMOS without interfacial layers was achieved by fluorine incorporation into HfO2. The driving current capability was increased up to 48% and 45% for n-MOSFET and p-MOSFET, respectively. It's caused by the oxygen vacancy was blocked by the fluorine incorporated interface and resulted in the suppression...
Fluorine distribution engineering in HfO2 to get higher performance (HP EOT=1.2 nm) and low stand-by power (LSTP EOT=1.8 nm) CMOS device with 48% driving current enhancement for HP, 73% leakage reduction for LSTP were demonstrated. Better uniformity (50% VtU and 9% IdU reduction) and excellent reliability, P/NBTI, of n-/p-MOSFET were achieved A new physical model of fluorine re-incorporation was proposed...
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