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Systematical study of the spontaneous carrier recombination lifetime has been performed in GaAs- and InP-based SCH quantum well lasers with different band offset. The lifetime decreases as the band offset decreases, accompanying the electron overflow.
Carrier recombination lifetime below threshold has been measured for quantum well lasers with different band offset between the quantum wells and the barrier layers. It is longer for larger band offset as high as ~5 ns in InGaAs quantum wells formed on GaAs, and shorter for smaller band offset as low as ~1 ns in InGaAsP quantum wells formed on InP.
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