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In this paper, the alloyed Ni/Ge/Au/Ge/Ni/Au and non‐alloyed Ti/Pt/Au Ohmic contacts are developed for InP‐based high electron mobility transistors (HEMTs). The optimal Ohmic contact resistance of 0.053 Ω mm has been achieved for the alloyed samples by annealing at 320 °C for 30 s, and a good Ohmic contact with contact resistance of 0.058 Ω mm has been formed by Ti/Pt/Au structure without annealing...
In this paper, the DC and RF characteristics of our own InP‐based HEMTs were investigated comprehensively with surface traps concentration varying among 0 cm−2, 1 × 1012 cm−2, 3 × 1012 cm−2. Reasonable physical models were used to describe the device performances, including hydrodynamic transport model, density gradient model, recombination models and so on. Moreover, surface Shockley–Read–Hall model...
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