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The buffer layers used in this study included an AlN/3C-SiC composite film stack and a single AlN layer. 3C-SiC in the composite film stack prepared by the two-step process functioned better as a buffer layer than that prepared by direct epitaxial growth. The composite buffer prepared by this method was compared with the single AlN buffer. The GaN films grown on the composite buffer were significantly...
We have grown GaN epilayers, with a thickness of 1.3-1.5<space>μm, on 100<space>mm diameter Si(111) substrates. The GaN films were grown by using buffer layers consisting of 3C-SiC and 2H-AlN. The buffer layers had flat surfaces without showing any grain microstructure. The GaN films were also flat and smooth without noticeable micro-cracks but had slip lines. X-ray diffraction and electron...
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