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We present a novel switching device named Z2-FET that features zero subthreshold swing and zero impact ionization. The device is built in fully-depleted silicon-on-insulator (FD-SOI) technology and is demonstrated to switch sharply with the subthreshold slope (SS) <1 mV/dec and an ION/IOFF current ratio > 1010. The device further shows large hysteresis in drain current-drain voltage (ID...
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