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One-dimensional movable structures (motion sensors) made from a metal silicide (WSi) core were successfully encapsulated inside a cavity in an interlayer dielectric (SiO2) covered by another metallic layer. The latter half of the fabrication process is the same as to that for the pressure sensor that we previously reported [1]; thus, both sensors can be fabricated simultaneously. As is the case with...
The authors describe a 16-Mb CMOS DRAM (dynamic RAM) with 55-ns access time and 130-mm/sup 2/ chip area. It features a high-speed latched sensing (LS) scheme and a built-in self-test (BIST) function with a microprogrammable ROM in which automatic test pattern generation procedures are stored by microcoded programs. To achieve 55-ns access time, the DRAM combines the LS scheme with conventional double-Al-layer...
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