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The atomic structure of the Al-induced clusters on Si(001) surface formed by the annealing of 0.5ML Al/Si(001) at 500°C has been studied using coaxial impact collision ion scattering spectroscopy (CAICISS). CAICISS results proposed that the Al atoms occupy the cave site (T4 site) and off-centered T4 site. To determine the structure of the Al-induced clusters definitely, classical ion-scattering trajectory...
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