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In this work, the graded channel concept has been introduced into a fully-depleted 0.15 μm SOI CMOS technology through a commercial industrial fabrication process in order to improve the RF noise performance of deep submicron scale devices. The benefits of using a graded channel transistor are explicit. An improved minimum noise figure is achieved while relaxing the minimum feature size to, at least,...
The superior performance of Graded-Channel MOSFET over classical MOSFET transistors is demonstrated to extend to down scaled channel lengths. While keeping a normal down scaling trend, Graded-Channel devices continue to show favoured static and analog performances in comparison to classical devices. Graded-Channel devices are also characterized in high temperature and high frequency regimes of operation.
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