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Strain-induced birefringence has been observed in bulk c-plane GaN substrates. Two-dimensional distribution of index ellipse difference |Δn| revealed a variety of distribution such as gradual U-shape distribution with rotational symmetry and chord- and spot-like patterns with three- and/or six-fold symmetries reflecting the whole manufacturing process of substrates. Although the absolute value of...
Electrical measurements of sidewall leakage are used to quantify the degree of sub-surface damage created by cutting CZT. High leakage is found at freshly cut surfaces but not at control surfaces. Dramatic reduction of leakage is demonstrated by subsequent polishing of cut sidewall surfaces to a point matching the control surfaces. CZT parts were cut using outer-diameter saw (OD), wire saw and laser...
Raman scattering study on vibrational modes has been reported in ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ions implantation, deposition, and post-annealing. The Raman experiments are performed in the implanted and unimplanted regions of the sample before and after etching. Only GaSb-like phonon modes are observed in the spectra measured from the unimplanted region. However, in addition to...
Strain issues on various commercial-substrates of InP, GaAs and GaP have been investigated by evaluating residual strain distribution with a scanning infrared polariscope (SIRP) and a near-infrared imaging polariscope (NIRIP). Since the thermal history during crystal growth and device-fabrication processes is sensitively reflected in the residual strain distribution, it is useful not only to control...
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