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We report a method for the fabrication of high structural quality CrN nanoislands on Cu(001). The CrN nanoislands can be fabricated in ultrahigh vacuum conditions by means of Cr atoms deposition on saturated Cu(001)c(2×2)-N surface and subsequent annealing at 500°C. Existence of two types of nanoislands is shown by scanning tunneling microscopy investigations with atomic resolution for different CrN...
This paper elucidated for the first time that titanium (Ti) is an excellent barrier metal (BM) material from the stand point of cost and performance, especially for the porous low-k ILD materials. Both stress induced voiding (SIV) suppression and one order longer electromigration (EM) lifetime were obtained by introducing Ti instead of the conventional tantalum (Ta). It has been considered that the...
A key technology for realizing an effective k-value (keff) required for 45nm node is proposed. We studied the behavior of effective dielectric constant derived from capacitance of double-level copper interconnect wires with porous low-k material in detail. The porous low-k materials easily absorb moisture due to process damage and the dielectric constant drastically increases. We have confirmed that...
MOCVD TiSiN was evaluated as a barrier for Cu interconnects application. The TiSiN film was formed by SiH/sub 4/ soaking of MOCVD TiN. The TiSiN film showed improved wetting and adhesion to Cu as well as less stress hysteresis in its integration with Cu. The low stress hysteresis yields higher resistance to Cu void generation during hot storage testing. Electrical tests on DLM Cu test structures demonstrated...
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