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Strain-induced birefringence has been observed in bulk c-plane GaN substrates. Two-dimensional distribution of index ellipse difference |Δn| revealed a variety of distribution such as gradual U-shape distribution with rotational symmetry and chord- and spot-like patterns with three- and/or six-fold symmetries reflecting the whole manufacturing process of substrates. Although the absolute value of...
Strain issues on various commercial-substrates of InP, GaAs and GaP have been investigated by evaluating residual strain distribution with a scanning infrared polariscope (SIRP) and a near-infrared imaging polariscope (NIRIP). Since the thermal history during crystal growth and device-fabrication processes is sensitively reflected in the residual strain distribution, it is useful not only to control...
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