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NiTi thin films were co-sputtered at 450 o C by using a Ni 50 Ti 50 and a Ti targets on 450 μm thick (100) silicon wafer without or with a SiO 2 buffer layer (Film A/B). The phase transformation characteristics, shape recovery and mechanical property of the deposited films were investigated. Freestanding Film A shows a multi-stage transformation, while freestanding...
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