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Planar MgB2/TiB2/MgB2 junctions were fabricated by locally removing MgB2 within a gap of les 50 nm on a bilayer film of MgB2/TiB2 on SiC substrate using focused ion beam (FIB). Junctions with gaps of different depths were studied. We found that when the gap is too shallow the junction shows a flux-flow behavior, while a too deep gap will result in a junction with no supercurrent. Only junctions with...
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