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Novel noncryogenic InAsSb photovoltaic detectors grown by molecular beam epitaxy are proposed and demonstrated. The quaternary alloy In0.88Al0.12As0.80Sb0.20 is introduced as a wide bandgap barrier layer lattice matched to the GaSb substrate. The valence band edge of In0.88Al0.12As0.80Sb0.20 nearly matches with InAs0.91Sb0.09, leading to more efficient transport of photogenerated holes. The resulting...
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